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1

Diamond UV detectors for future solar physics missions

Hochedez, J.-F, Bergonzo, P, Castex, M.-C, Dhez, P, Hainaut, O, Sacchi, M, Alvarez, J, Boyer, H, Deneuville, A, Gibart, P, Guizard, B, Kleider, J.-P, Lemaire, P, Mer, C, Monroy, E, Muñoz, E, Muret, P,

Journal:

Diamond and Related Materials

Année:

2001

Langue:

english

Fichier:

PDF, 516 KB

english, 2001

2

As

von Bardeleben, H. J., Bourgoin, J. C., Basmaji, P., Gibart, P.

Journal:

Physical Review B

Année:

1989

Langue:

english

Fichier:

PDF, 150 KB

english, 1989

3

Polarization Field Determination in AlGaN/GaN HFETs

J. A. Garrido, A. Jiménez, J. L. Sánchez-Rojas, E. Muñoz, F. Omnès, P. Gibart

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 160 KB

english, 1999

4

Crystal growth of garnets by chemical transport

Journal:

Journal of Crystal Growth

Année:

1973

Langue:

english

Fichier:

PDF, 609 KB

english, 1973

5

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 178 KB

english, 2005

6

Growth of GaN on (1 1 1) Si: a route towards self-supported GaN

H. Lahrèche, G. Nataf, E. Feltin, B. Beaumont, P. Gibart

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 352 KB

english, 2001

7

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

G. Martinez-Criado, M. Kuball, M. Benyoucef, A. Sarua, E. Frayssinet, B. Beaumont, P. Gibart, C.R. Miskys, M. Stutzmann

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 249 KB

english, 2003

8

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

Beaumont, B, Gibart, P, Vaille, M, Haffouz, S, Nataf, G, Bouillé, A

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 194 KB

english, 1998

9

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0 0 0 1) sapphire

S Dassonneville, A Amokrane, B Sieber, J.-L Farvacque, B Beaumont, V Bousquet, P Gibart, K Leifer, J.-D Ganiere

Journal:

Physica B: Condensed Matter

Année:

1999

Langue:

english

Fichier:

PDF, 251 KB

english, 1999

10

FIB technology applied to the improvement of the crystal quality of GaN and to the fabrication of organised arrays of quantum dots

J. Gierak, E. Bourhis, R. Jede, L. Bruchhaus, B. Beaumont, P. Gibart

Journal:

Microelectronic Engineering

Année:

2004

Langue:

english

Fichier:

PDF, 303 KB

english, 2004

11

Cation distribution in substituted lithium ferrite

Nogues, M., Dormann, J., Perrin, M., Simonet, W., Gibart, P.

Journal:

IEEE Transactions on Magnetics

Année:

1979

Langue:

english

Fichier:

PDF, 241 KB

english, 1979

12

HVPE-GaN: comparison of emission properties and microstructure of films grown on different laterally overgrown templates

Paskova, T., Valcheva, E., Paskov, P.P., Monemar, B., Roskowski, A.M., Davis, R.F., Beaumont, B., Gibart, P.

Journal:

Diamond and Related Materials

Année:

2004

Langue:

english

Fichier:

PDF, 941 KB

english, 2004

13

The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

Haffouz, S., Lahrèche, H., Vennéguès, P., de Mierry, P., Beaumont, B., Omnès, F., Gibart, P.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 1.00 MB

english, 1998

14

Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter

Hochedez, J-F., Alvarez, J., Auret, F.D., Bergonzo, P., Castex, M-C., Deneuville, A., Defise, J.M., Fleck, B., Gibart, P., Goodman, S.A., Hainaut, O., Kleider, J-P., Lemaire, P., Manca, J., Monroy, E.

Journal:

Diamond and Related Materials

Année:

2002

Langue:

english

Fichier:

PDF, 649 KB

english, 2002

15

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Lahreche, H, Vaille, M, Vennéguès, P, Laügt, M, Beaumont, B, Gibart, P

Journal:

Diamond and Related Materials

Année:

2000

Langue:

english

Fichier:

PDF, 341 KB

english, 2000

16

alloys

Calleja, E., Sanchez, F. J., Muñoz, E., Vigil, E., Omnès, F., Gibart, P., Martin, J. M., Gonzalez Díez, G.

Journal:

Physical Review B

Année:

1996

Langue:

english

Fichier:

PDF, 118 KB

english, 1996

17

Modeling of the spectral response of Al[sub x]Ga[sub 1−x]N Schottky ultraviolet photodetectors

Bouhdada, A., Hanzaz, M., Gibart, P., Omnès, F., Monroy, E., Muñoz, E.

Journal:

Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 341 KB

english, 2000

18

As

Laine, T., Mäkinen, J., Saarinen, K., Hautojärvi, P., Corbel, C., Fille, M. L., Gibart, P.

Journal:

Physical Review B

Année:

1996

Langue:

english

Fichier:

PDF, 187 KB

english, 1996

19

investigated by Mössbauer spectroscopy: An example of orbital para-to-ferromagnetism transition

Brossard, L., Dormann, J. L., Goldstein, L., Gibart, P., Renaudin, P.

Journal:

Physical Review B

Année:

1979

Langue:

english

Fichier:

PDF, 773 KB

english, 1979

20

Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors

Hanzaz, M., Bouhdada, A., Gibart, P., Omnès, F.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 336 KB

english, 2002

21

As

Gibart, P., Williamson, D. L., El Jani, B., Basmaji, P.

Journal:

Physical Review B

Année:

1988

Langue:

english

Fichier:

PDF, 459 KB

english, 1988

22

Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-xAs from Transport Experiments under Hydrostatic Pressure

Azema, S., Mosser, V., Camassel, Jean, Piotrzkowski, R., Robert, Jean-Louis, Gibart, Pierre, Contour, J.-P., Massié, J., Marty, A.

Journal:

Materials Science Forum

Année:

1989

Fichier:

PDF, 416 KB

1989

23

Doping of Homoepitaxial GaN Layers

P. Prystawko, M. Leszczynski, B. Beaumont, P. Gibart, E. Frayssinet, W. Knap, P. Wisniewski, M. Bockowski, T. Suski, S. Porowski

Journal:

physica status solidi (b)

Année:

1998

Langue:

english

Fichier:

PDF, 161 KB

english, 1998

24

Magneto-Reflectivity of Gallium Nitride Epilayers

P.A. Shields, R.J. Nicholas, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 157 KB

english, 1999

25

Effect of an Electric Field on the Electroluminescence and the Photocurrent in InGaN Single Quantum Well Light Emitting Diodes

P. de Mierry, S. Dalmasso, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 149 KB

english, 1999

26

Femtosecond Exciton Dynamics and the Mott Transition in GaN under Resonant Excitation

S. Hess, R.A. Taylor, K. Kyhm, J.F. Ryan, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 174 KB

english, 1999

27

Temperature Dependence of Photoluminescence Intensities of Undoped and Doped GaN

M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 120 KB

english, 1999

28

A TEM Evaluation of ELOG GaN Grown on AlN Buffer Layer by HVPE on (0001) 6H-SiC

P. Ruterana, B. Beaumont, P. Gibart, Yu. Melnik

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 202 KB

english, 1999

29

TEM Study of the Behavior of Dislocations during ELO of GaN

V. Bousquet, P. Vennéguès, B. Beaumont, M. Vaille, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 263 KB

english, 1999

30

Electron Transport in MOVPE GaN Grown on Silicon Nitride Treated Sapphire

H. Eshghi, D. Lancefield, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 138 KB

english, 1999

31

Evolution with Temperature of the Strain State of GaN Thin Layers Grown on Different Substrates

E. Deleporte, C. Guénaud, M. Voos, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 135 KB

english, 1999

32

Near-Band Gap Selective Photoluminescence in Wurtzite GaN

G. Neu, M. Teisseire, B. Beaumont, H. Lahreche, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 175 KB

english, 1999

33

Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers

E. Frayssinet, W. Knap, J.L. Robert, P. Prystawko, M. Leszczynski, T. Suski, P. Wisniewski, E. Litwin-Staszewska, S. Porowski, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 130 KB

english, 1999

34

Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures

H. Lahrèche, M. Vaille, B. Beaumont, M. Laügt, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 171 KB

english, 1999

35

Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN

E. Monroy, F. Calle, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 163 KB

english, 1999

36

Spectroscopic Studies of InGaN Ternary Alloys

H. P. D. Schenk, P. de Mierry, F. Omnès, P. Gibart

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 202 KB

english, 1999

37

Modeling Study of Hydride Vapor Phase Epitaxy of GaN

S. Yu. Karpov, D. V. Zimina, Yu. N. Makarov, B. Beaumont, G. Nataf, P. Gibart, M. Heuken, H. Jürgensen, A. Krishnan

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 139 KB

english, 1999

38

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

B. Beaumont, V. Bousquet, P. Vennéguès, M. Vaille, A. Bouillé, P. Gibart, S. Dassonneville, A. Amokrane, B. Sieber

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 207 KB

english, 1999

39

Optimization of Si/N Treatment Time of Sapphire Surface and Its Effect on the MOVPE GaN Overlayers

S. Haffouz, B. Beaumont, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 247 KB

english, 1999

40

Investigation of a New Photoluminescence Band at 1.727 eV in Si-Doped Ga0.71Al0.29As

K. Khirouni, F. Rzigua, S. Alaya, A. Selmi, J. P. Sallese, P. Gibart

Journal:

physica status solidi (b)

Année:

1997

Langue:

english

Fichier:

PDF, 196 KB

english, 1997

41

Epitaxial Lateral Overgrowth of GaN

B. Beaumont, Ph. Vennéguès, P. Gibart

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 1.99 MB

english, 2001

42

Investigation of Refractive Index and Optical Propagation Loss in Gallium Nitride Based Waveguides

E. Dogheche, P. Ruterana, G. Nouet, F. Omnes, P. Gibart

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 78 KB

english, 2001

43

Comparison of Exciton–Biexciton with Bound Exciton–Biexciton Dynamics in GaN: Quantum Beats and Temperature Dependence of the Acoustic-Phonon Interaction

K. Kyhm, R.A. Taylor, J.F. Ryan, T. Aoki, M. Kuwata-Gonokami, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 108 KB

english, 2001

44

Optical Characterization of AlxGa1—xN Alloys (x < 0.7) Grown on Sapphire or Silicon

M. Leroux, S. Dalmasso, F. Natali, S. Helin, C. Touzi, S. Laügt, M. Passerel, F. Omnes, F. Semond, J. Massies, P. Gibart

Journal:

physica status solidi (b)

Année:

2002

Langue:

english

Fichier:

PDF, 109 KB

english, 2002

45

(Al,Ga)N Ultraviolet Photodetectors and Applications

E. Muñoz, E. Monroy, J.L. Pau, F. Calle, E. Calleja, F. Omnes, P. Gibart

Journal:

physica status solidi (a)

Année:

2000

Langue:

english

Fichier:

PDF, 135 KB

english, 2000

46

High Quality p+–n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

L. Beji, B. el Jani, P. Gibart

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 115 KB

english, 2001

47

Application and Performance of GaN Based UV Detectors

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 119 KB

english, 2001

48

Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy

H.P.D. Schenk, E. Feltin, M. Vaille, P. Gibart, R. Kunze, H. Schmidt, M. Weihnacht, E. Doghèche

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 105 KB

english, 2001

49

Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, M. Leroux, P. Gibart

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 148 KB

english, 2001

50

Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN

M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 168 KB

english, 2001